BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//INFN-LNF - ECPv5.14.2.1//NONSGML v1.0//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
X-WR-CALNAME:INFN-LNF
X-ORIGINAL-URL:https://w3.lnf.infn.it
X-WR-CALDESC:Eventi per INFN-LNF
BEGIN:VTIMEZONE
TZID:Europe/Rome
BEGIN:DAYLIGHT
TZOFFSETFROM:+0100
TZOFFSETTO:+0200
TZNAME:CEST
DTSTART:20180325T010000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:+0200
TZOFFSETTO:+0100
TZNAME:CET
DTSTART:20181028T010000
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTART;TZID=Europe/Rome:20181009T143000
DTEND;TZID=Europe/Rome:20181009T160000
DTSTAMP:20260823T065324
CREATED:20180712T184720Z
LAST-MODIFIED:20181016T184942Z
UID:12440-1539095400-1539100800@w3.lnf.infn.it
SUMMARY:Halide Perovskites: new materials for optoelectronic devices
DESCRIPTION:Organometal Halide Perovskites such as MethylAmmonium Lead Iodide are opening new opportunity for solution-process high performing optoelectronic devices such as solar cells\, photodetectors\, light-emitting diodes etc. The success of such materials is based on the ideal direct band gap\, good electron and hole diffusion lengths and the easy manufacture. Moreover\, tuning of electronic and optical properties can be achieved by varying cation composition (Cs\, Rb\, FA\, MA etc.) and halide composition (I\, Br\, Cl). One of the most successful  application of such materials is in the field of solar cell where a certified efficiency of 22.7% has been achieved for single cells and 27.3% for tandem perovskite/silicon.  I this talk I will review the main characteristics of the halide perovskites and the application to conventional optoelectronic devices showing possible applications in the field of high-energy physics.
URL:/event/halide-perovskites-new-materials-for-optoelectronic-devices/
LOCATION:Aula Salvini
CATEGORIES:Seminari generali
END:VEVENT
END:VCALENDAR